InHO is an indium-based oxide ceramic compound, likely a mixed-metal oxide system combining indium with hydrogen and oxygen species. This material belongs to the broader family of transparent conducting oxides and wide-bandgap semiconductors, though its specific phase structure and properties require specialized characterization. InHO and related indium oxide systems are of significant research interest for optoelectronic and photonic applications where transparent conductivity or wide-gap semiconductor behavior is needed, though it remains less established in high-volume industrial production compared to mature alternatives like ITO (indium tin oxide).
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.739 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01200 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.9827 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.02209 | eV/atom | — |