InHN is an indium-based ceramic compound belonging to the nitride family, likely a ternary or quaternary indium-containing nitride system. This material class is primarily of research and emerging-technology interest, explored for optoelectronic, semiconductor, and wide-bandgap device applications where indium nitrides offer tunable electronic properties and potential for high-frequency or photonic devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 11,359.4 | ksi | — | ||
Shear Modulus(G) | 216.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1652 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.243 | eV/atom | — | ||
Formation Energy(ΔHf) | 1.109 | eV/atom | — |