InHN is an indium-based ceramic compound belonging to the nitride family, likely a ternary or quaternary indium-containing nitride system. This material class is primarily of research and emerging-technology interest, explored for optoelectronic, semiconductor, and wide-bandgap device applications where indium nitrides offer tunable electronic properties and potential for high-frequency or photonic devices.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 11,359.4 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 216.1 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1652 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.243 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 1.109 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data