InHgN3 — Properties & Data | MatWorld

InHgN3

ceramic

· InHgN3

InHgN3 is an experimental ternary nitride ceramic compound containing indium, mercury, and nitrogen, representing an understudied composition in the wide-bandgap semiconductor and ceramic family. This material is primarily of research interest for potential optoelectronic and high-temperature applications, though it remains in early-stage investigation with limited industrial adoption; the mercury component presents both processing challenges and potential advantages for specific electronic or photonic devices compared to more conventional III-V nitrides like GaN or InN.

research semiconductorsexperimental optoelectronicshigh-bandgap materialsUV/deep-UV deviceswide-bandgap nitride systems

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	4.612	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.440	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InHgN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental