InHfO2N
ceramic· InHfO2N
InHfO₂N is an experimental ceramic compound combining indium, hafnium, oxygen, and nitrogen—a member of the high-k dielectric oxide nitride family. This material is primarily investigated in research settings for advanced microelectronics and thin-film device applications, where its high dielectric constant and thermal stability make it a candidate for next-generation gate dielectrics and insulating layers as conventional silicon dioxide approaches physical scaling limits.
advanced semiconductor gateshigh-k dielectricsthin-film electronicsmicroelectronic device researchalternative gate oxides
Compliance & Regulations
?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.