InHfO2N

ceramic

· InHfO2N

InHfO₂N is an experimental ceramic compound combining indium, hafnium, oxygen, and nitrogen—a member of the high-k dielectric oxide nitride family. This material is primarily investigated in research settings for advanced microelectronics and thin-film device applications, where its high dielectric constant and thermal stability make it a candidate for next-generation gate dielectrics and insulating layers as conventional silicon dioxide approaches physical scaling limits.

advanced semiconductor gateshigh-k dielectricsthin-film electronicsmicroelectronic device researchalternative gate oxides

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	-0.00116	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.6000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InHfO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental