InHfO2F

semiconductor
· InHfO2F

InHfO₂F is an experimental fluorine-doped indium hafnium oxide semiconductor compound, combining the high-k dielectric properties of hafnium oxide with indium doping and fluorine modification to tailor electronic behavior. This material remains primarily in research and development phases, explored for next-generation microelectronic devices where enhanced carrier mobility, improved dielectric performance, or modified band structure could benefit gate oxides and thin-film transistor architectures. The fluorine incorporation and indium-hafnium combination represents an approach to fine-tune oxygen vacancy behavior and interface quality beyond conventional HfO₂, making it of interest for advanced CMOS scaling and alternative semiconductor device geometries where conventional oxides approach fundamental limits.

advanced gate dielectricsthin-film transistors (TFT)next-generation CMOS deviceshigh-k oxide researchsemiconductor device engineeringmicroelectronic materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
3.050
eV—
Magnetic Moment(μB)
-4.185e-15
μB—
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
0.1800
eV/atom—
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.