InHfN3

ceramic

· InHfN3

InHfN3 is an experimental ceramic compound combining indium, hafnium, and nitrogen, belonging to the family of refractory nitride ceramics. This material is primarily of research interest for high-temperature and extreme-environment applications, where the high melting point of hafnium nitride and potential electronic properties from indium doping could offer advantages over conventional refractory materials. While not yet established in mainstream industrial production, nitride ceramics of this type are being investigated for next-generation thermal barriers, electronic devices, and structural components in aerospace and semiconductor manufacturing contexts.

high-temperature structural ceramicsrefractory coatingssemiconductor research applicationsthermal barrier materialsadvanced ceramics developmentextreme environment testing

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	2.637	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.280	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InHfN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental