Indium hydride (InH) is an intermetallic ceramic compound combining indium with hydrogen, typically studied as a thin-film or bulk ceramic material in materials research. This compound is primarily of academic and experimental interest rather than established industrial production, with potential applications in semiconductor interfaces, hydrogen storage research, and advanced ceramic coatings where indium's unique electronic properties combined with hydride bonding may offer novel functionality. Engineers would consider InH primarily in research contexts exploring new materials for next-generation electronics or energy storage rather than as a replacement for conventional engineering ceramics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,330.1 | ksi | — | ||
Shear Modulus(G) | 1,707.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1542 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2603 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.2570 | eV/atom | — |