InGeO3 is an indium germanate ceramic compound combining indium oxide and germanium oxide constituents. This material is primarily of research interest for optoelectronic and solid-state device applications, particularly in scenarios requiring transparent or semiconducting oxide ceramics. InGeO3 and related indium-germanate phases are investigated for potential use in high-temperature electronics, photonic devices, and gas-sensing applications where the combined properties of indium and germanium oxides may offer advantages over single-component alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 3.068e-7 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -1.499 | eV/atom | — | ||
| ↳ | 0.4600 | eV/atom | — |