InGeO₂S is a mixed-metal oxide sulfide ceramic compound containing indium, germanium, oxygen, and sulfur. This is a research-phase material within the broader family of chalcogenide ceramics and mixed-anion compounds, investigated primarily for its potential in optoelectronic and photonic applications where combined ionic and covalent bonding can tailor bandgap and light-matter interactions. Interest in this composition stems from its position between traditional oxides and sulfides, offering potential routes to tunable optical properties, wide-bandgap semiconductivity, or ion-conducting behavior depending on synthesis and doping strategies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000647 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.7000 | eV/atom | — |