InGeO2N — Properties & Data | MatWorld

InGeO2N

ceramic

· InGeO2N

InGeO₂N is an experimental oxynitride ceramic compound combining indium, germanium, oxygen, and nitrogen phases. This material family is of research interest for wide-bandgap semiconductor and photocatalytic applications, representing an emerging class of materials that could potentially bridge properties between conventional oxides and nitrides.

wide-bandgap semiconductors (research)photocatalytic applications (development)optoelectronic devices (experimental)high-temperature ceramic coatings (exploratory)environmental remediation (research)next-generation solar cells (conceptual)

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	-0.00186	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.6600	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InGeO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental