InGeN2

ceramic

· JVASP-117239· InGeN2

InGeN₂ is an indium germanium nitride ceramic compound, part of the III-V nitride semiconductor family. This material is primarily of research interest for advanced optoelectronic and high-temperature applications, where its wide bandgap and thermal stability could offer advantages over conventional nitride semiconductors like GaN and InN in specific device architectures. Engineers considering InGeN₂ should evaluate it in the context of emerging semiconductor technologies rather than mature commercial applications, as the material remains largely in development phases with limited industrial deployment.

wide-bandgap semiconductorsoptoelectronic deviceshigh-temperature electronicsresearch-phase materialsIII-V nitride compounds

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.2302	lb/in³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.1885	eV/atom	—
Formation Energy(ΔHf)	0.1320	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InGeN2

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental