InGe7 is an indium germanium ceramic compound that belongs to the family of III-V semiconductor materials and intermetallic ceramics. This material is primarily of research and developmental interest, positioned within the broader context of advanced semiconductors and optoelectronic ceramics. InGe7 is investigated for potential applications in infrared optics, photovoltaic devices, and high-temperature electronic applications where its indium-germanium composition offers tunable bandgap and thermal properties compared to binary alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1846 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.06610 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.06545 | eV/atom | — |