InGe3

ceramic

· JVASP-106533· InGe3

InGe₃ is an indium germanide ceramic compound belonging to the intermetallic or semiconductor ceramic family. This material is primarily of research interest rather than established in high-volume industrial production, being investigated for potential applications in advanced electronic and optoelectronic devices where the specific bandgap and crystal structure of indium-germanium phases offer unique properties. Engineers would consider InGe₃ for specialized semiconductor, photonic, or thermoelectric applications where conventional silicon or standard III-V compounds are insufficient, though material availability, processing maturity, and cost typically limit adoption to research, prototype, and specialized device contexts.

semiconductor devices (research)optoelectronic componentsthermoelectric applicationsadvanced electronics prototypingcompound semiconductor research

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.2302	lb/in³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—
Seebeck Coefficient(S)	-4.630	µV/K	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.2807	eV/atom	—
Formation Energy(ΔHf)	0.2793	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InGe3

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental