InGaTe₂ is an indium gallium telluride ceramic compound belonging to the family of ternary chalcogenide semiconductors. This material is primarily of research and development interest rather than a widespread industrial commodity, being investigated for optoelectronic and photovoltaic applications where its electronic band structure and thermal properties may offer advantages in niche high-performance contexts. Engineers would consider this material for experimental device designs requiring specific combinations of optical transparency, electrical conductivity, and thermal stability in extreme or specialized environments where conventional semiconductors reach their limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 25.59 | GPa | — | ||
Poisson's Ratio(ν) | 0.2500 | - | — | ||
Shear Modulus(G) | 15.25 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.921 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -69.13 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01910 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3127 | eV/atom | — |