InGaSe2 — Properties & Data | MatWorld

InGaSe2

ceramic

· JVASP-90610· InGaSe2

InGaSe₂ is a ternary semiconductor ceramic compound combining indium, gallium, and selenium—a member of the III-VI semiconductor family with layered crystal structure. This is primarily a research material explored for optoelectronic and photovoltaic applications, offering tunable bandgap properties through indium-gallium composition control. Unlike binary alternatives (GaSe or InSe), ternary compositions enable band engineering for enhanced light absorption and carrier mobility in thin-film devices.

thin-film photovoltaicsinfrared detectorsnonlinear optical devicesphotoelectrochemical cellstunable semiconductor optics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	5.425	kg/m³	DFT · OptB88vdW

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Filter by

Method

Property	Unit	Conditions
Band Gap(Eg)2 entries	eV	DFT · OptB88vdW
↳	eV	DFT · TBmBJ
Magnetic Moment(μB)	µB	DFT · OptB88vdW

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.02620	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.5192	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InGaSe2

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental