InGaSb₂ is an indium gallium antimonide compound semiconductor ceramic, belonging to the III-V semiconductor family used in optoelectronic and infrared device applications. This material is primarily employed in infrared detectors, thermal imaging systems, and mid-wave to long-wave infrared sensors where its narrow bandgap enables detection of longer wavelengths than conventional semiconductors. InGaSb-based devices are valued in defense, aerospace, and industrial thermal sensing applications because the material's composition allows tuning of optical response across the infrared spectrum, making it a preferred alternative to mercury-based detectors and other infrared materials in critical sensing systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 41.02 | GPa | — | ||
Poisson's Ratio(ν) | 0.2700 | - | — | ||
Shear Modulus(G) | 22.85 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.390 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.06800 range 0.000–0.1360median of 2 measurements | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00520 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1160 | eV/atom | — |