InGaSb₂ is an indium gallium antimonide compound semiconductor ceramic, belonging to the III-V semiconductor family used in optoelectronic and infrared device applications. This material is primarily employed in infrared detectors, thermal imaging systems, and mid-wave to long-wave infrared sensors where its narrow bandgap enables detection of longer wavelengths than conventional semiconductors. InGaSb-based devices are valued in defense, aerospace, and industrial thermal sensing applications because the material's composition allows tuning of optical response across the infrared spectrum, making it a preferred alternative to mercury-based detectors and other infrared materials in critical sensing systems.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 41.02 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2700 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 22.85 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.390 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.1360 | eV | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 5.840 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00520 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.1160 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data