InGaS3 is an indium gallium sulfide ceramic compound belonging to the III-VI semiconductor family, synthesized as a layered material with potential for optoelectronic and photonic applications. This is primarily a research-phase compound being investigated for its semiconducting properties and layer-dependent characteristics, positioning it within the broader context of two-dimensional materials and heterostructure engineering. The material's interest stems from its potential in next-generation devices where tunable bandgaps and efficient light-matter interactions are advantageous.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Exfoliation Energy(Eexf) | 48.47 | meV/atom | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.083 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.547 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 14.38 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.2168 | C/m² | — | ||
| ↳ | 0.4009 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -66.96 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6782 | eV/atom | — |