InGaS3 — Properties & Data | MatWorld

InGaS3

ceramic

· InGaS3

InGaS3 is an indium gallium sulfide ceramic compound belonging to the III-VI semiconductor family, synthesized as a layered material with potential for optoelectronic and photonic applications. This is primarily a research-phase compound being investigated for its semiconducting properties and layer-dependent characteristics, positioning it within the broader context of two-dimensional materials and heterostructure engineering. The material's interest stems from its potential in next-generation devices where tunable bandgaps and efficient light-matter interactions are advantageous.

photovoltaic devicesphotodetectorsoptoelectronic semiconductorstwo-dimensional materials researchheterostructure engineeringlight-emitting applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Exfoliation Energy(Eexf)	48.47	meV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	4.083	kg/m³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	1.547	eV	DFT · OptB88vdW
↳	2.809	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)	14.38	-	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	7.640	-	DFT · OptB88vdW
↳	5.580	-	DFT · TBmBJ
Electron Effective Mass(m*e)	0.1967	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	1.677	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)2 entries	0.4009	C/m²	DFT · OptB88vdW
↳	0.2168	C/m²	DFT · PBE
Piezoelectric Stress Tensor(eij)	Matrix (redacted)	C/m²	DFT · PBE
Thermoelectric Power Factor(PF)2 entries	0.000328	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00196	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-66.96	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	365	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	7.030	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.6782	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InGaS3

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental