InGaP2

ceramic

· JVASP-101184· InGaP2

InGaP₂ is an indium gallium phosphide compound semiconductor belonging to the III-V ceramic family, engineered for optoelectronic and photovoltaic applications. It is primarily used in high-efficiency multijunction solar cells, laser diodes, and light-emitting devices where its direct bandgap and lattice-matching properties to GaAs substrates make it superior to many alternatives for converting between electrical and optical energy. The material is particularly valued in space power systems and concentrated photovoltaic (CPV) applications where efficiency and radiation tolerance are critical.

multijunction solar cellsspace power systemslaser diodesoptoelectronic devicesconcentrated photovoltaicshigh-efficiency tandem cells

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	4.340	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.4230	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.03610	eV/atom	—
Formation Energy(ΔHf)	-0.2916	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InGaP2

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental