InGaON2

ceramic

· InGaON2

InGaON2 is an experimental ternary ceramic compound combining indium, gallium, oxygen, and nitrogen—a member of the oxynitride ceramic family designed to bridge properties between traditional oxides and nitrides. This material remains primarily in research development, investigated for its potential to combine the thermal stability of oxides with the hardness and wear resistance of nitrides, with particular interest in applications requiring enhanced mechanical properties at elevated temperatures.

high-temperature structural ceramicswear-resistant coatingssemiconductor device applicationsresearch/experimental compoundsoxynitride ceramic developmentcutting tool materials

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	-1.032	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.440	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InGaON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental