InGaOFN

ceramic

· InGaOFN

InGaOFN is an experimental oxynitride ceramic compound combining indium, gallium, oxygen, and nitrogen phases. This material family is under research development for wide-bandgap semiconductor and optoelectronic applications where thermal stability and chemical durability are critical. The oxynitride structure offers potential advantages in high-temperature electronics and photonic devices compared to traditional oxides or nitrides alone, though commercial deployment remains limited.

wide-bandgap semiconductorshigh-temperature optoelectronicsUV/visible light emitterssemiconductor researchthermal barrier coatings (experimental)photonic devices (development stage)

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	-0.00749	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.7400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InGaOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental