InGaO₄ is an indium gallium oxide ceramic compound belonging to the family of mixed-metal oxides, which are of interest as functional ceramics for semiconductor and optoelectronic applications. This material remains largely in the research and development phase, with potential applications in transparent conducting oxides, high-temperature electronics, and wide-bandgap semiconductor devices where the combined properties of indium and gallium oxides could offer advantages over single-component alternatives. Its selection would be driven by specialized performance requirements in emerging device architectures rather than established high-volume industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2026 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 2.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3906 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.166 | eV/atom | — |