InGaO2S

ceramic

· InGaO2S

InGaO2S is a mixed-metal oxide sulfide ceramic compound containing indium, gallium, oxygen, and sulfur. This is a research-phase material being explored for optoelectronic and photocatalytic applications, particularly where conventional wide-bandgap semiconductors or oxides fall short. The material combines properties from both oxide and sulfide ceramic families, potentially offering tunable electronic characteristics and enhanced light absorption compared to pure oxide ceramics, making it of interest for next-generation photocatalysis, gas sensing, or thin-film device applications.

photocatalytic coatingsvisible-light photocatalysissemiconductor thin filmsgas sensing devicesoptoelectronic researchenvironmental remediation

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	-0.000187	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.7200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InGaO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental