InGaO2N

ceramic

· InGaO2N

InGaO₂N is an oxynitride ceramic compound combining indium, gallium, oxygen, and nitrogen phases, representing an emerging material in the semiconductor and photocatalytic ceramics family. This material is primarily investigated in research contexts for photocatalytic water splitting, visible-light photocatalysis, and optoelectronic device applications, where the tunable bandgap from nitrogen incorporation offers advantages over conventional oxides like indium oxide or gallium oxide. Engineers consider oxynitride compositions like InGaO₂N when conventional wide-bandgap semiconductors are too passive under visible light or when bandgap engineering through anion substitution is required for energy conversion and environmental remediation applications.

photocatalytic water splittingvisible-light photocatalysisenvironmental remediationoptoelectronic devicesresearch/development materials

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	1.159	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.040	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InGaO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental