InGaO₂F is an experimental mixed-metal oxide fluoride ceramic compound containing indium, gallium, oxygen, and fluorine. This material belongs to the family of oxyfluoride ceramics, which are primarily investigated in research contexts for their potential optical, electronic, and ionic-conducting properties that differ from conventional oxide ceramics. The incorporation of fluorine into the indium-gallium oxide lattice can modify band structure and ion mobility, making this compound of interest for emerging applications in solid-state batteries, transparent conducting films, or specialized optical devices, though it remains largely in the development phase rather than established industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 1.641e-15 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.3200 | eV/atom | — |