InGaN3

ceramic
· InGaN3

InGaN3 is an indium gallium nitride ceramic compound, part of the III-nitride semiconductor family widely studied for optoelectronic and high-power electronic applications. This material is primarily used in LED and laser diode structures, where its direct bandgap and tunable composition enable emission across the visible and ultraviolet spectrum; it is also being explored for high-electron-mobility transistors (HEMTs) and RF power devices due to its wide bandgap and high breakdown field strength. InGaN-based systems have become the dominant technology for solid-state lighting and represent a research frontier for next-generation power electronics and UV emitters, offering superior performance over traditional GaAs and Si alternatives in efficiency, thermal stability, and frequency capability.

LED lighting and displayslaser diodesRF power amplifiershigh-electron-mobility transistors (HEMTs)UV emitters and sensorssolid-state lighting

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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Magnetic Moment(μB)
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μB——
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
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eV/atom——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.