InGaN2

ceramic
· JVASP-110231· InGaN2

InGaN2 is an experimental nitride ceramic compound combining indium, gallium, and nitrogen—a member of the III-nitride semiconductor family widely studied for optoelectronic and high-power device applications. While bulk InGaN2 remains largely in research phase, the InGaN material system is industrially established in blue and green light-emitting diodes (LEDs), laser diodes, and high-electron-mobility transistors (HEMTs) for RF and power electronics. Engineers would consider this compound for next-generation wide-bandgap semiconductor devices where enhanced thermal stability, carrier mobility, or optical properties over conventional GaN or InGaN layers could provide competitive advantages in efficiency or operating temperature.

LED and laser diodesRF power transistors (HEMTs)High-temperature power electronicsUV to visible optoelectronicsResearch and developmentWide-bandgap semiconductor devices

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Bulk Modulus(K)
143.0
GPa—
Poisson's Ratio(ν)
0.2900
-—
Shear Modulus(G)
70.71
GPa—
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Density(ρ)
6.388
kg/m³—
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)
0.2170
eV—
Magnetic Moment(μB)
0.000
µB—
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Energy Above Hull(ΔEhull)
0.07540
eV/atom—
Formation Energy(ΔHf)
-0.2154
eV/atom—
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.