InGaN2 is an experimental nitride ceramic compound combining indium, gallium, and nitrogen—a member of the III-nitride semiconductor family widely studied for optoelectronic and high-power device applications. While bulk InGaN2 remains largely in research phase, the InGaN material system is industrially established in blue and green light-emitting diodes (LEDs), laser diodes, and high-electron-mobility transistors (HEMTs) for RF and power electronics. Engineers would consider this compound for next-generation wide-bandgap semiconductor devices where enhanced thermal stability, carrier mobility, or optical properties over conventional GaN or InGaN layers could provide competitive advantages in efficiency or operating temperature.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 143.0 | GPa | — | ||
Poisson's Ratio(ν) | 0.2900 | - | — | ||
Shear Modulus(G) | 70.71 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.388 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2170 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.07540 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2154 | eV/atom | — |