InGaCuO4 is an experimental mixed-metal oxide ceramic composed of indium, gallium, copper, and oxygen. This compound belongs to the family of complex oxide semiconductors and is primarily of research interest for its potential electronic and photocatalytic properties rather than established industrial production. The material represents ongoing exploration into novel oxide ceramics for advanced device applications, with potential advantages in photocatalysis, transparent electronics, or photoelectrochemical systems where the combination of multi-metal sites may offer unique catalytic or electronic behavior compared to single-metal oxide alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.225 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.9350 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.06890 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.473 | eV/atom | — |