InGaAs2
ceramic· JVASP-103472· InGaAs2
InGaAs2 is an indium gallium arsenide sulfide compound semiconductor, representing a III-V material system with mixed anion composition. This material belongs to the broader family of III-V semiconductors engineered for optoelectronic and photonic applications where bandgap tuning and lattice matching are critical design factors.
infrared photodetectorsoptoelectronic devicesquantum well structuresresearch semiconductorsphotonic integrated circuitsmid-wave infrared sensing
Compliance & Regulations
?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | kg/m³ | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | µB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.