InGaAs2

ceramic

· JVASP-103472· InGaAs2

InGaAs2 is an indium gallium arsenide sulfide compound semiconductor, representing a III-V material system with mixed anion composition. This material belongs to the broader family of III-V semiconductors engineered for optoelectronic and photonic applications where bandgap tuning and lattice matching are critical design factors.

infrared photodetectorsoptoelectronic devicesquantum well structuresresearch semiconductorsphotonic integrated circuitsmid-wave infrared sensing

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	5.248	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.02800	eV/atom	—
Formation Energy(ΔHf)	-0.2453	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InGaAs2

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental