InGa3N4

ceramic

· JVASP-102336· InGa3N4

InGa₃N₄ is an experimental indium-gallium nitride ceramic compound belonging to the ternary nitride family, representing a variation on gallium nitride (GaN) compositions with indium alloying. This material exists primarily in research and development contexts, where the indium doping of gallium nitride matrices is investigated for potential enhancement of optoelectronic and high-temperature semiconductor properties. The addition of indium to nitride ceramics is explored to tailor bandgap energy and lattice parameters for next-generation power electronics, high-frequency devices, and wide-bandgap semiconductor applications, though InGa₃N₄ specifically remains a less common composition compared to more established ternary nitrides like InGaN used in LED and RF device manufacturing.

wide-bandgap semiconductor researchoptoelectronic device developmenthigh-temperature ceramic coatingsexperimental power electronicsnitride-based compound semiconductors

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	6.199	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.5920	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.05100	eV/atom	—
Formation Energy(ΔHf)	-0.3799	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InGa3N4

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental