InFeAs is an intermetallic compound composed of indium, iron, and arsenic, belonging to the family of III-V and transition metal arsenides. This material is primarily of research interest rather than established industrial production, investigated for its potential in semiconductor and optoelectronic applications due to its mixed metallic-semiconducting character. The compound's properties make it relevant to materials scientists exploring alternatives in thermoelectric devices, magnetoresistive components, and narrow-bandgap semiconductor systems where unconventional band structures could offer performance advantages.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 57.30 | GPa | — | ||
Poisson's Ratio(ν) | 0.3500 | - | — | ||
Shear Modulus(G) | -840.0 | MPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.140 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 2.717 | µB | — | ||
Seebeck Coefficient(S) | -9.220 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.8778 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.7352 | eV/atom | — |