InCuS₂ is a ternary semiconductor compound combining indium, copper, and sulfur, belonging to the family of chalcopyrite-type semiconductors. This material is primarily of research interest for photovoltaic and optoelectronic applications, where its direct bandgap and light-absorbing properties make it a candidate for thin-film solar cells and photodetectors as an alternative to more established compounds like CIGS (copper indium gallium selenide). While not yet widely commercialized, InCuS₂ represents an experimental approach to reducing reliance on scarce elements in semiconductor technology, though material stability and device efficiency optimization remain active areas of investigation.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 9,690 | ksi | — | ||
Poisson's Ratio(ν) | 0.3400 | - | — | ||
Shear Modulus(G) | 3,810.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1674 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.500 | eV | — | ||
| ↳ | 0.01900 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 3.024 | C/m² | — | ||
Seebeck Coefficient(S) | -38.14 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5424 | eV/atom | — |