InCuGeS₄ is a quaternary chalcogenide compound combining indium, copper, germanium, and sulfur. This is a research-phase material belonging to the I–III–IV–VI₂ semiconductor family, studied primarily for its potential in photovoltaic and optoelectronic applications due to its tunable bandgap and crystal structure. While not yet commercially established, chalcogenide semiconductors like this are of interest for thin-film solar cells, infrared detectors, and thermoelectric devices as alternatives to conventional silicon-based or cadmium-based materials, particularly where environmental or performance constraints make traditional semiconductors less suitable.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.007 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.038 | eV | DFT · OptB88vdW | ||
| ↳ | 1.437 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 8.812 | - | DFT · OptB88vdW | ||
| ↳ | 6.629 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 33.19 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.4852 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data