InCdN3 is an experimental ternary nitride ceramic compound combining indium, cadmium, and nitrogen elements. This material belongs to the family of III-V and mixed-metal nitrides under active research for semiconductor and wide-bandgap applications. As a research-phase compound, InCdN3 is being investigated primarily in academic and advanced materials labs for potential optoelectronic, photovoltaic, or high-temperature device applications, though industrial deployment remains limited; its development is motivated by the ability to tune electronic properties through cadmium incorporation relative to established binary nitrides like InN and GaN.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.00963 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.820 | eV/atom | — |