InBO2N is an advanced ceramic compound combining indium, boron, oxygen, and nitrogen—a nitride-oxide hybrid material in the indium borate nitride family. This is a research-phase ceramic being investigated for high-temperature structural applications and semiconductor-related uses, where the combination of metallic (indium), covalent (boron-nitrogen bonds), and ionic (oxygen) character may offer unique thermal stability, hardness, or electrical properties compared to conventional oxides or nitrides alone.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.7625 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.420 | eV/atom | — |