InBiSe₃ is an indium bismuth selenide compound belonging to the chalcogenide ceramic family, typically investigated as a narrow-bandgap semiconductor with potential thermoelectric properties. This is primarily a research-phase material rather than an established commercial ceramic, studied for its electronic and thermal transport characteristics in solid-state applications. Interest in this compound focuses on thermoelectric energy conversion and potentially optoelectronic devices where bismuth chalcogenides show promise as alternatives to more conventional materials.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.688 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.8040 | eV | DFT · OptB88vdW | ||
| ↳ | 1.299 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 17.97 | - | DFT · OptB88vdW | ||
| ↳ | 12.46 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 33.40 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.4604 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data