InBiSe3

ceramic

· JVASP-110236· InBiSe3

InBiSe₃ is an indium bismuth selenide compound belonging to the chalcogenide ceramic family, typically investigated as a narrow-bandgap semiconductor with potential thermoelectric properties. This is primarily a research-phase material rather than an established commercial ceramic, studied for its electronic and thermal transport characteristics in solid-state applications. Interest in this compound focuses on thermoelectric energy conversion and potentially optoelectronic devices where bismuth chalcogenides show promise as alternatives to more conventional materials.

thermoelectric cooling/power generationnarrow-bandgap semiconductorsmaterials researchsolid-state electronicsinfrared optoelectronicsexperimental phase-change materials

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	6.688	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.8040	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	—
Formation Energy(ΔHf)	-0.4604	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InBiSe3

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental