InBiS₃ is an indium bismuth sulfide ceramic compound belonging to the III-V sulfide semiconductor family. This material is primarily of research and developmental interest rather than established in high-volume industrial production. InBiS₃ and related mixed-metal chalcogenides are investigated for optoelectronic and photovoltaic applications where tunable bandgap, thermal stability, and potential for thin-film processing are valued; it represents an emerging alternative in the search for earth-abundant, lead-free semiconductors for solar cells, photodetectors, and other light-active devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,855.2 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2700 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 3,164.7 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1978 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.254 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01910 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.5115 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data