InBiS3

ceramic

· JVASP-151676· InBiS3

InBiS₃ is an indium bismuth sulfide ceramic compound belonging to the III-V sulfide semiconductor family. This material is primarily of research and developmental interest rather than established in high-volume industrial production. InBiS₃ and related mixed-metal chalcogenides are investigated for optoelectronic and photovoltaic applications where tunable bandgap, thermal stability, and potential for thin-film processing are valued; it represents an emerging alternative in the search for earth-abundant, lead-free semiconductors for solar cells, photodetectors, and other light-active devices.

photovoltaic researchthin-film semiconductorsoptoelectronic devicesphotodetectorslead-free alternativesmaterials research

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	40.37	GPa	—
Poisson's Ratio(ν)	0.2700	-	—
Shear Modulus(G)	21.82	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	5.476	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.254	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.01910	eV/atom	—
Formation Energy(ΔHf)	-0.5115	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InBiS3

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental