InBi is an intermetallic ceramic compound combining indium and bismuth, representing a research-phase material in the III-V semiconductor and intermetallic family. While not yet established in mainstream industrial production, InBi and similar indium-bismuth compounds are being explored in materials research for potential applications in thermoelectric devices, optoelectronics, and advanced functional materials where the unique electronic properties of this binary system could offer advantages over conventional alternatives. The material's relatively weak interlayer bonding (evidenced by its exfoliation characteristics) suggests potential for layered device engineering or thin-film applications in specialized electronics.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,251.8 | ksi | — | ||
Exfoliation Energy(Eexf) | 240.7 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.3300 | - | — | ||
Shear Modulus(G) | 2,168.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.3163 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 347.6 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | 22.75 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.03260 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.02992 | eV/atom | — |