InBi₃Se₆ is a ternary chalcogenide ceramic compound combining indium, bismuth, and selenium—a material family studied primarily for thermoelectric and optoelectronic applications. This composition remains largely in the research phase, with potential relevance to solid-state cooling devices, infrared detectors, and low-dimensional electronic systems where bismuth chalcogenides are known to exhibit favorable electronic properties.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2540 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7060 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.4353 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data