InBi2S4Cl is a quaternary semiconductor compound combining indium, bismuth, sulfur, and chlorine elements. This material belongs to the family of mixed-metal chalcohalides and represents an experimental composition primarily of interest in solid-state physics research rather than established industrial production. The compound's potential applications lie in optoelectronic and photovoltaic device research, where the layered sulfide structure and halide doping offer opportunities for band gap engineering and charge transport optimization in next-generation semiconductor devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,566.6 | ksi | — | ||
Poisson's Ratio(ν) | 0.2700 | - | — | ||
Shear Modulus(G) | 3,997.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2196 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.500 | eV | — | ||
| ↳ | 1.575 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 52.32 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -112.8 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6240 | eV/atom | — |