InBi2S4Cl — Properties & Data | MatWorld

InBi2S4Cl

Name: InBi2S4Cl
Brand: MatWorld

semiconductor

· InBi2S4Cl

InBi2S4Cl is a quaternary semiconductor compound combining indium, bismuth, sulfur, and chlorine elements. This material belongs to the family of mixed-metal chalcohalides and represents an experimental composition primarily of interest in solid-state physics research rather than established industrial production. The compound's potential applications lie in optoelectronic and photovoltaic device research, where the layered sulfide structure and halide doping offer opportunities for band gap engineering and charge transport optimization in next-generation semiconductor devices.

experimental optoelectronic devicesphotovoltaic researchsolid-state semiconductor developmentlayered material heterostructuresband gap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	52.17	GPa	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2700	-	DFT · OptB88vdW
Shear Modulus(G)	27.56	GPa	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	6.079	kg/m³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	1.575	eV	DFT · OptB88vdW
↳	2.336	eV	DFT · TBmBJ
↳	1.500	eV	Measured
Dielectric Constant (Relative Permittivity)(εr)	52.32	-	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	11.28	-	DFT · OptB88vdW
↳	8.292	-	DFT · TBmBJ
Electron Effective Mass(m*e)	0.2567	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	1.933	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.000	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00117	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00254	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-112.8	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	349.9	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	15.82	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.6240	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InBi2S4Cl

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

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