InBi2S4Br

semiconductor

· InBi2S4Br

InBi₂S₄Br is a mixed-halide indium bismuth sulfide compound belonging to the family of quaternary semiconductors, combining group III (indium), group V (bismuth), and chalcogenide (sulfur) elements with halide doping. This is an emerging research material rather than an established industrial compound; such mixed-anion semiconductors are being investigated for optoelectronic and photovoltaic applications where bandgap engineering and enhanced light absorption are desired. The inclusion of both sulfide and bromide anions offers potential routes to tune electronic properties and carrier dynamics compared to binary or ternary alternatives, though practical device integration and scalability remain largely unexplored.

photovoltaic absorber layeroptoelectronic device researchbandgap engineeringthin-film semiconductorsolar cell developmentphotodetector applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.500	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

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InBi2S4Br

Electrical Properties

Regulatory Screening

Environmental

Export Control