InBeN3

ceramic
· InBeN3

InBeN3 is an experimental ceramic compound composed of indium, beryllium, and nitrogen, belonging to the family of III-V nitride semiconductors and wide-bandgap ceramics. This material is primarily of research interest for potential high-temperature electronic and optoelectronic applications, where its wide bandgap and thermal stability could offer advantages over conventional semiconductors, though it remains largely in development phase without widespread industrial deployment. The combination of indium and beryllium with nitrogen positions it as a candidate for extreme-environment devices, though manufacturing, toxicity concerns associated with beryllium, and cost remain significant barriers to practical adoption.

High-temperature semiconductors (research)Wide-bandgap electronicsUV optoelectronics (theoretical)Extreme-environment devicesPower electronics prototypingThermal management applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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eV——
Magnetic Moment(μB)
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μB——
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
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eV/atom——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.