InBaN3 — Properties & Data | MatWorld

InBaN3

ceramic

· InBaN3

InBaN3 is an experimental indium-barium nitride ceramic compound that belongs to the family of wide-bandgap semiconductors and advanced ceramics. Currently in research and development rather than mainstream industrial production, this material is being investigated for its potential in high-temperature, high-power electronic applications where thermal stability and electrical properties are critical.

Wide-bandgap power electronics (research)High-temperature semiconductor devicesNext-generation RF/microwave applicationsThermal management in advanced electronics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	0.4537	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.940	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InBaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental