InB₂As is an indium boron arsenide ceramic compound belonging to the family of III-V semiconductors with ceramic characteristics. This is a research-phase material not yet established in high-volume industrial production; it represents exploration within the boron-rich III-V compound family for potential high-performance applications. Interest in materials like InB₂As stems from their potential for extreme hardness, thermal stability, and electronic properties useful in harsh environments where conventional semiconductors or ceramics reach their limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 21,132 | ksi | — | ||
Poisson's Ratio(ν) | 0.4600 | - | — | ||
Shear Modulus(G) | 1,705.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1981 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.877 | eV/atom | — | ||
Formation Energy(ΔHf) | 1.707 | eV/atom | — |