InAuON2 is an experimental compound combining indium, gold, oxygen, and nitrogen—a quaternary ceramic material that bridges metallic and ceramic chemistries. This material family is of primary interest in advanced semiconductor research and thin-film device development, where mixed-metal oxinitrides can offer tunable electronic properties, enhanced thermal stability, or novel catalytic behavior not achievable with conventional binary or ternary phases. While not yet established in mainstream industrial production, InAuON2 represents the broader research effort to engineer high-performance ceramics for next-generation optoelectronic, photonic, or catalytic applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.4918 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.780 | eV/atom | — |