InAuO2N is an experimental ternary ceramic compound combining indium, gold, oxygen, and nitrogen elements, representing a research-phase material in the oxide-nitride family rather than a commercialized engineering ceramic. This material system is primarily investigated for potential applications in optoelectronics and thin-film device engineering, where the combination of noble metal (Au) with semiconductor elements (In, N, O) may offer unique electronic or photonic properties. The material remains largely in academic development stages, with potential relevance to researchers exploring new transparent conducting oxides, photocatalytic materials, or advanced semiconductor interfaces.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | -0.05410 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.520 | eV/atom | — |